Chemical solution for etching treatment
The present invention provides a chemical solution for etching treatment, which is capable of preventing excessive etching of a copper-plated molded article while satisfactorily etching a copper thin film, which is a seed layer, and provides a method for manufacturing a substrate provided with a cop...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The present invention provides a chemical solution for etching treatment, which is capable of preventing excessive etching of a copper-plated molded article while satisfactorily etching a copper thin film, which is a seed layer, and provides a method for manufacturing a substrate provided with a copper-plated molded article, which includes etching using the chemical solution. An oxidizing substance (A) and water (W) are included in a chemical solution for etching an object to be processed in which a substrate, a copper thin film formed by a method other than plating, and a copper-plated molded article are stacked in this order in the thickness direction of the substrate, and the oxidizing substance (A) is etched by using a combination of an oxyacid (A1a) and a peroxide (A1b) or a peracid (A2). And at least one of acetic acid, which is an oxyacid (A1a), and peracetic acid, which is a peracid (A2), is included in the oxidizing substance (A).
本发明提供一种蚀刻处理用的药液,能够在良好地蚀刻作为籽晶层的铜薄膜的同时,防止镀铜造型物的过度的蚀刻,并提供一种包括使用该药液进行蚀刻的、具 |
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