Two-dimensional photonic crystal laser

A two-dimensional photonic crystal laser (10) is provided with: a substrate (11) comprising an n-type semiconductor; a p-type cladding layer (p-type semiconductor layer) (131) that is provided on the upper side of the substrate (11) and is composed of a p-type semiconductor; an active layer (14) pro...

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Bibliographische Detailangaben
Hauptverfasser: ISHIZAKI KENJI, NODA, SUSUMU, KOKUSHI WATARU, ENOKI KENTARO, DE ZOYSA MENAKA
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A two-dimensional photonic crystal laser (10) is provided with: a substrate (11) comprising an n-type semiconductor; a p-type cladding layer (p-type semiconductor layer) (131) that is provided on the upper side of the substrate (11) and is composed of a p-type semiconductor; an active layer (14) provided on the upper side of the p-type cladding layer (131); a two-dimensional photonic crystal layer (16) that is provided on the upper side of the active layer (14) and is formed by periodically arranging, in a plate-shaped base material (161) comprising an n-type semiconductor, different refractive index regions (162) comprising a material having a refractive index different from the refractive index of the base material (161); a first tunneling layer (121), which is provided between the substrate (11) and the p-type cladding layer (131), and which is composed of an n-type semiconductor having a higher carrier density than the substrate (11); a second tunneling layer (122), which is provided between the first tun