Electrically programmable memory body and its prodn

The production process includes providing a silicon substrate and doping in high density to form the first and the second buried layers; depositing grid silica layer and the firstpolysilicon layer; growing an isolating layer onto the first polysilicon layer;etching non-floating grid photoresistor part of isolating layer and the first polysilicon layer and removing the non-floating grid photoresistor; depositing a thin oxide layer; depositing the second overlaying polysilicon layer; and etching noncontrolling grid part of the second polysilicon layer and etching the isolating layer and the first polysilicon layer.