Power semiconductor device with voltage detection function
The invention provides a power semiconductor device with a voltage detection function. The power semiconductor device comprises a power IGBT (Insulated Gate Bipolar Translator) device, a transition region device and an IGBT voltage detection device which are integrated on the same substrate, the vol...
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| creator | CHEN YUJIA ZHAO YISHANG LIU XIAOHAN XIA ZIMING YANG YANG LI ZEHONG HUANG LINGXUAN WANG TONGYANG |
| description | The invention provides a power semiconductor device with a voltage detection function. The power semiconductor device comprises a power IGBT (Insulated Gate Bipolar Translator) device, a transition region device and an IGBT voltage detection device which are integrated on the same substrate, the voltage with the same change trend as the collector voltage of the power IGBT device can be obtained by detecting the voltage leading-out end and fed back in time, and the area of the device does not need to be additionally increased. The voltage detection structure is integrated by adopting the same set of technological process as the device, the compatibility of the voltage detection structure and the original device is good, an additional voltage detection circuit is not needed, the overall area can be reduced, and the power consumption cost is reduced. Meanwhile, a voltage detection capacitor integrated in an IGBT voltage detection device area is connected with a parasitic capacitor in parallel, so that the voltag |
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The power semiconductor device comprises a power IGBT (Insulated Gate Bipolar Translator) device, a transition region device and an IGBT voltage detection device which are integrated on the same substrate, the voltage with the same change trend as the collector voltage of the power IGBT device can be obtained by detecting the voltage leading-out end and fed back in time, and the area of the device does not need to be additionally increased. The voltage detection structure is integrated by adopting the same set of technological process as the device, the compatibility of the voltage detection structure and the original device is good, an additional voltage detection circuit is not needed, the overall area can be reduced, and the power consumption cost is reduced. Meanwhile, a voltage detection capacitor integrated in an IGBT voltage detection device area is connected with a parasitic capacitor in parallel, so that the voltag</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221125&DB=EPODOC&CC=CN&NR=115394756A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221125&DB=EPODOC&CC=CN&NR=115394756A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEN YUJIA</creatorcontrib><creatorcontrib>ZHAO YISHANG</creatorcontrib><creatorcontrib>LIU XIAOHAN</creatorcontrib><creatorcontrib>XIA ZIMING</creatorcontrib><creatorcontrib>YANG YANG</creatorcontrib><creatorcontrib>LI ZEHONG</creatorcontrib><creatorcontrib>HUANG LINGXUAN</creatorcontrib><creatorcontrib>WANG TONGYANG</creatorcontrib><title>Power semiconductor device with voltage detection function</title><description>The invention provides a power semiconductor device with a voltage detection function. The power semiconductor device comprises a power IGBT (Insulated Gate Bipolar Translator) device, a transition region device and an IGBT voltage detection device which are integrated on the same substrate, the voltage with the same change trend as the collector voltage of the power IGBT device can be obtained by detecting the voltage leading-out end and fed back in time, and the area of the device does not need to be additionally increased. The voltage detection structure is integrated by adopting the same set of technological process as the device, the compatibility of the voltage detection structure and the original device is good, an additional voltage detection circuit is not needed, the overall area can be reduced, and the power consumption cost is reduced. Meanwhile, a voltage detection capacitor integrated in an IGBT voltage detection device area is connected with a parasitic capacitor in parallel, so that the voltag</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAKyC9PLVIoTs3NTM7PSylNLskvUkhJLctMTlUozyzJUCjLzylJTE8FipWkJpdk5ucppJXmgRk8DKxpiTnFqbxQmptB0c01xNlDN7UgPz61uCAxOTUvtSTe2c_Q0NTY0sTc1MzRmBg1AMRPL8I</recordid><startdate>20221125</startdate><enddate>20221125</enddate><creator>CHEN YUJIA</creator><creator>ZHAO YISHANG</creator><creator>LIU XIAOHAN</creator><creator>XIA ZIMING</creator><creator>YANG YANG</creator><creator>LI ZEHONG</creator><creator>HUANG LINGXUAN</creator><creator>WANG TONGYANG</creator><scope>EVB</scope></search><sort><creationdate>20221125</creationdate><title>Power semiconductor device with voltage detection function</title><author>CHEN YUJIA ; ZHAO YISHANG ; LIU XIAOHAN ; XIA ZIMING ; YANG YANG ; LI ZEHONG ; HUANG LINGXUAN ; WANG TONGYANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115394756A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEN YUJIA</creatorcontrib><creatorcontrib>ZHAO YISHANG</creatorcontrib><creatorcontrib>LIU XIAOHAN</creatorcontrib><creatorcontrib>XIA ZIMING</creatorcontrib><creatorcontrib>YANG YANG</creatorcontrib><creatorcontrib>LI ZEHONG</creatorcontrib><creatorcontrib>HUANG LINGXUAN</creatorcontrib><creatorcontrib>WANG TONGYANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEN YUJIA</au><au>ZHAO YISHANG</au><au>LIU XIAOHAN</au><au>XIA ZIMING</au><au>YANG YANG</au><au>LI ZEHONG</au><au>HUANG LINGXUAN</au><au>WANG TONGYANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Power semiconductor device with voltage detection function</title><date>2022-11-25</date><risdate>2022</risdate><abstract>The invention provides a power semiconductor device with a voltage detection function. The power semiconductor device comprises a power IGBT (Insulated Gate Bipolar Translator) device, a transition region device and an IGBT voltage detection device which are integrated on the same substrate, the voltage with the same change trend as the collector voltage of the power IGBT device can be obtained by detecting the voltage leading-out end and fed back in time, and the area of the device does not need to be additionally increased. The voltage detection structure is integrated by adopting the same set of technological process as the device, the compatibility of the voltage detection structure and the original device is good, an additional voltage detection circuit is not needed, the overall area can be reduced, and the power consumption cost is reduced. Meanwhile, a voltage detection capacitor integrated in an IGBT voltage detection device area is connected with a parasitic capacitor in parallel, so that the voltag</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | Power semiconductor device with voltage detection function |
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