Power semiconductor device with voltage detection function

The invention provides a power semiconductor device with a voltage detection function. The power semiconductor device comprises a power IGBT (Insulated Gate Bipolar Translator) device, a transition region device and an IGBT voltage detection device which are integrated on the same substrate, the voltage with the same change trend as the collector voltage of the power IGBT device can be obtained by detecting the voltage leading-out end and fed back in time, and the area of the device does not need to be additionally increased. The voltage detection structure is integrated by adopting the same set of technological process as the device, the compatibility of the voltage detection structure and the original device is good, an additional voltage detection circuit is not needed, the overall area can be reduced, and the power consumption cost is reduced. Meanwhile, a voltage detection capacitor integrated in an IGBT voltage detection device area is connected with a parasitic capacitor in parallel, so that the voltag