Integrated circuit, metalized structure of integrated circuit and manufacturing method of metalized structure

A metallization structure of an integrated circuit (IC) includes: an inter-metal dielectric (IMD) layer; a patterned metal layer embedded in the IMD layer; a patterned top metal layer disposed on the IMD layer; an electrical via including a via material passing through the IMD layer and connecting the patterned top metal layer and the patterned metal layer embedded in the IMD layer; and a metal-insulator-metal (MIM) capacitor. The MIM capacitor includes: a first capacitor metal layer including a via material contacting an MIM capacitor landing region of a patterned metal layer embedded in an IMD layer; a second capacitor metal layer including a via material contacting the first MIM capacitor terminal region of the patterned top metal layer; and an insulator layer disposed between the first capacitor metal layer and the second capacitor metal layer. 一种集成电路(IC)的金属化结构包含：金属间介电(IMD)层；图案化金属层，嵌入在IMD层中；图案化顶部金属层，配置在IMD层上；电通孔，包括穿过IMD层的通孔材料且连接图案化顶部金属层和嵌入在IMD层中的图案化金属层；以及金属-绝缘体-金属(MIM)电容器。MIM电容器包含：第一电容器金属层，包括接触嵌入在IMD层中的图案