High-strength high-toughness ultrathin germanium single crystal wafer corrosion method
The invention discloses a method for corroding a high-strength high-toughness ultrathin germanium single crystal wafer, which comprises the following steps of: 1) inserting and plugging the germanium single crystal wafer in an acidic corrosive liquid 1 to corrode the germanium single crystal wafer,...
Gespeichert in:
Hauptverfasser: | , , , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention discloses a method for corroding a high-strength high-toughness ultrathin germanium single crystal wafer, which comprises the following steps of: 1) inserting and plugging the germanium single crystal wafer in an acidic corrosive liquid 1 to corrode the germanium single crystal wafer, and the acidic corrosive liquid 1 comprises the following components in volume ratio: high purity water: HF: H2O2 = (8-10): (0.5-1): (0.5-0.8); (2) the germanium single crystal wafer obtained after the step (1) is completed is corroded in an acidic corrosive liquid 2, and the acidic corrosive liquid 2 is prepared from high-purity water, HF and H2O2 according to the volume ratio of (1-2): (1-1.5): (0.05-0.1); and (3) putting the germanium single crystal wafer subjected to the step (2) and the clamping plug into a spin-drying machine for spin-drying. According to the method, the problems of pattern corrosion on the surface of the wafer and the like are solved, the surface of the corroded wafer is transparent and brig |
---|