Transistor and forming method thereof

A transistor may be provided by forming a gate electrode, a semiconductor metal oxide liner, a gate dielectric, and an active layer over a substrate in a forward or reverse order and by forming a source electrode and a drain electrode on ends of the active layer. The semiconductor metal oxide liner includes a thin semiconductor metal oxide material that acts as a hydrogen barrier material. The embodiment of the invention also relates to a transistor and a forming method thereof. 可以通过以正向顺序或以反向顺序在衬底上方形成栅电极、半导体金属氧化物衬垫、栅极电介质和有源层并且通过在有源层的端部上形成源电极和漏电极来提供晶体管。半导体金属氧化物衬垫包括用作氢阻挡材料的薄半导体金属氧化物材料。本申请的实施例还涉及晶体管及其形成方法。