Power semiconductor device

Power semiconductor device

A power semiconductor device includes: a semiconductor body; a first load terminal structure and a second load terminal structure; an active region; a drift region; and a backside region including a first backside emitter zone and a second backside emitter zone. At least one of the first backside em...

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Hauptverfasser: HAUF MARKUS, STOIB, BEAT, SCHULZ HANS-JUERGEN, SCHULZ HEINRICH, BABURSKE ROMAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HAUF MARKUS
STOIB, BEAT
SCHULZ HANS-JUERGEN
SCHULZ HEINRICH
BABURSKE ROMAN
description A power semiconductor device includes: a semiconductor body; a first load terminal structure and a second load terminal structure; an active region; a drift region; and a backside region including a first backside emitter zone and a second backside emitter zone. At least one of the first backside emitter zone and the second backside emitter zone includes: a plurality of first segments including at least one first zone of the second conductivity type having a minimum lateral extension of at most 50 [mu] m; and/or a plurality of second segments in contact with the second load terminal structure and having a minimum lateral extension of at least 50 [mu] m. The second backside emitter zone differs from the first backside emitter zone by: the presence of a first section; the presence of a second section; a minimum lateral extension of the first section; a minimum lateral extension of the second section; a lateral distance between the first sections; a lateral distance between the second sections; a minimum lateral
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN115377184A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN115377184A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN115377184A3</originalsourceid><addsrcrecordid>eNrjZJAKyC9PLVIoTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGpsbm5oYWJo7GxKgBAGK-I0c</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Power semiconductor device</title><source>esp@cenet</source><creator>HAUF MARKUS ; STOIB, BEAT ; SCHULZ HANS-JUERGEN ; SCHULZ HEINRICH ; BABURSKE ROMAN</creator><creatorcontrib>HAUF MARKUS ; STOIB, BEAT ; SCHULZ HANS-JUERGEN ; SCHULZ HEINRICH ; BABURSKE ROMAN</creatorcontrib><description>A power semiconductor device includes: a semiconductor body; a first load terminal structure and a second load terminal structure; an active region; a drift region; and a backside region including a first backside emitter zone and a second backside emitter zone. At least one of the first backside emitter zone and the second backside emitter zone includes: a plurality of first segments including at least one first zone of the second conductivity type having a minimum lateral extension of at most 50 [mu] m; and/or a plurality of second segments in contact with the second load terminal structure and having a minimum lateral extension of at least 50 [mu] m. The second backside emitter zone differs from the first backside emitter zone by: the presence of a first section; the presence of a second section; a minimum lateral extension of the first section; a minimum lateral extension of the second section; a lateral distance between the first sections; a lateral distance between the second sections; a minimum lateral</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20221122&amp;DB=EPODOC&amp;CC=CN&amp;NR=115377184A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20221122&amp;DB=EPODOC&amp;CC=CN&amp;NR=115377184A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAUF MARKUS</creatorcontrib><creatorcontrib>STOIB, BEAT</creatorcontrib><creatorcontrib>SCHULZ HANS-JUERGEN</creatorcontrib><creatorcontrib>SCHULZ HEINRICH</creatorcontrib><creatorcontrib>BABURSKE ROMAN</creatorcontrib><title>Power semiconductor device</title><description>A power semiconductor device includes: a semiconductor body; a first load terminal structure and a second load terminal structure; an active region; a drift region; and a backside region including a first backside emitter zone and a second backside emitter zone. At least one of the first backside emitter zone and the second backside emitter zone includes: a plurality of first segments including at least one first zone of the second conductivity type having a minimum lateral extension of at most 50 [mu] m; and/or a plurality of second segments in contact with the second load terminal structure and having a minimum lateral extension of at least 50 [mu] m. The second backside emitter zone differs from the first backside emitter zone by: the presence of a first section; the presence of a second section; a minimum lateral extension of the first section; a minimum lateral extension of the second section; a lateral distance between the first sections; a lateral distance between the second sections; a minimum lateral</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAKyC9PLVIoTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGpsbm5oYWJo7GxKgBAGK-I0c</recordid><startdate>20221122</startdate><enddate>20221122</enddate><creator>HAUF MARKUS</creator><creator>STOIB, BEAT</creator><creator>SCHULZ HANS-JUERGEN</creator><creator>SCHULZ HEINRICH</creator><creator>BABURSKE ROMAN</creator><scope>EVB</scope></search><sort><creationdate>20221122</creationdate><title>Power semiconductor device</title><author>HAUF MARKUS ; STOIB, BEAT ; SCHULZ HANS-JUERGEN ; SCHULZ HEINRICH ; BABURSKE ROMAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115377184A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HAUF MARKUS</creatorcontrib><creatorcontrib>STOIB, BEAT</creatorcontrib><creatorcontrib>SCHULZ HANS-JUERGEN</creatorcontrib><creatorcontrib>SCHULZ HEINRICH</creatorcontrib><creatorcontrib>BABURSKE ROMAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HAUF MARKUS</au><au>STOIB, BEAT</au><au>SCHULZ HANS-JUERGEN</au><au>SCHULZ HEINRICH</au><au>BABURSKE ROMAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Power semiconductor device</title><date>2022-11-22</date><risdate>2022</risdate><abstract>A power semiconductor device includes: a semiconductor body; a first load terminal structure and a second load terminal structure; an active region; a drift region; and a backside region including a first backside emitter zone and a second backside emitter zone. At least one of the first backside emitter zone and the second backside emitter zone includes: a plurality of first segments including at least one first zone of the second conductivity type having a minimum lateral extension of at most 50 [mu] m; and/or a plurality of second segments in contact with the second load terminal structure and having a minimum lateral extension of at least 50 [mu] m. The second backside emitter zone differs from the first backside emitter zone by: the presence of a first section; the presence of a second section; a minimum lateral extension of the first section; a minimum lateral extension of the second section; a lateral distance between the first sections; a lateral distance between the second sections; a minimum lateral</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Power semiconductor device
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