Power semiconductor device

A power semiconductor device includes: a semiconductor body; a first load terminal structure and a second load terminal structure; an active region; a drift region; and a backside region including a first backside emitter zone and a second backside emitter zone. At least one of the first backside emitter zone and the second backside emitter zone includes: a plurality of first segments including at least one first zone of the second conductivity type having a minimum lateral extension of at most 50 [mu] m; and/or a plurality of second segments in contact with the second load terminal structure and having a minimum lateral extension of at least 50 [mu] m. The second backside emitter zone differs from the first backside emitter zone by: the presence of a first section; the presence of a second section; a minimum lateral extension of the first section; a minimum lateral extension of the second section; a lateral distance between the first sections; a lateral distance between the second sections; a minimum lateral