Silicon carbide wafer cleaning method

The invention relates to a silicon carbide wafer cleaning method, which comprises the following steps: sequentially carrying out SPM cleaning, DIW cleaning, SC1 cleaning, DIW cleaning and other pre-cleaning on a degummed silicon carbide wafer, and then carrying out megasonic scanning cleaning on the silicon carbide wafer by using a silicon carbide wafer megasonic cleaning device without DHF cleaning, SC2 cleaning and the like, so that the cleaning effect is good, and the cleaning efficiency is high. According to the megasonic cleaning equipment for the silicon carbide wafer, the megasonic energy uniformity can be effectively controlled on the 8-inch silicon carbide wafer, and the non-uniformity is within 1.9%; the cleaning liquid used by the megasonic cleaning equipment for the silicon carbide wafer is deionized water, and the particle removal efficiency can reach 98.9% on the premise that the microstructure is not damaged. Compared with groove type megasonic cleaning equipment, the megasonic spray head in th