Overwrite mode in memory program operations

Systems and methods for performing memory program operations in an overwrite mode are described. An example memory device includes a memory array including a plurality of memory cells electrically coupled to a plurality of word lines and a plurality of bit lines; and a controller coupled to the memory array, the controller performing operations including: in response to identifying a first data item to be stored by a portion of the memory array, identifying a second data item to be stored by a portion of the memory array; causing a first memory program operation to be performed to program a set of memory cells included in the portion of the memory array to a first target threshold voltage; and in response to identifying a second data item to be stored by the portion of the memory array, causing a second memory program operation to be performed to program the set of memory cells to a second target threshold voltage that exceeds the first target threshold voltage. 描述用于在覆写模式中执行存储器编程操作的系统和方法。实例存储器装置包括：存储器阵列，其包括电耦