BOE etching solution for semiconductor and preparation method of BOE etching solution

The invention relates to a BOE etching solution for a semiconductor and a preparation method of the BOE etching solution, and relates to the field of semiconductor etching. 230 to 265 parts of an ammonium fluoride water solution; 3-5 parts of a filling agent; 3-5 parts of a surfactant; 24 to 34 parts of modified dispersed nano particles; 8 to 10 parts of nano boron nitride; the modified dispersed nanoparticles are prepared from the following raw materials: epoxy group modified nano carbon, hydrophilic active dispersion liquid and nano boron nitride. According to the invention, the modified dispersed nanoparticles are added into the etching liquid system, and holes in the surface of the etched semiconductor can be filled, so that the occurrence of the phenomenon that the quality of the semiconductor material is reduced is reduced. 本申请涉及一种半导体用BOE蚀刻液及其制备方法，涉及半导体蚀刻的领域，其包括如下质量分的组分：氢氟酸水容液40-45份；氟化铵水容液230-265份；填充剂3-5份；表面活性剂3-5份；改性分散纳米粒子24-34份；纳米氮化硼8-10份；所述改性分散纳米粒子原料包括环氧基改性纳米碳、亲水活性分散液与纳米氮化硼。本申请具在蚀刻液体系中添加有改性分散纳米粒子，可将蚀