Flat plate type PECVD (plasma enhanced chemical vapor deposition) equipment
The invention discloses a flat plate type PECVD (Plasma Enhanced Chemical Vapor Deposition) device which comprises a reaction chamber, a cathode panel, a jacking mechanism and a substrate, the substrate is positioned on the jacking mechanism, and the jacking mechanism and the substrate are both posi...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a flat plate type PECVD (Plasma Enhanced Chemical Vapor Deposition) device which comprises a reaction chamber, a cathode panel, a jacking mechanism and a substrate, the substrate is positioned on the jacking mechanism, and the jacking mechanism and the substrate are both positioned in the reaction chamber. The cathode panel is arranged in the reaction chamber and serves as a chamber cover of the reaction chamber to form a real environment with the reaction chamber, a parallel discharge substrate is formed between the cathode panel and the substrate, and an insulation assembly is arranged between the side wall of the cathode panel and the reaction chamber. The method is used for preventing the side wall of a cathode panel and the side wall of a reaction chamber from discharging and sparking. The invention has the advantages of simple structure, reduced cost, high production efficiency, prolonged service life and the like.
本发明公开了一种平板式PECVD设备,包括反应腔室、阴极面板、顶升机构和衬底,所述衬底位于所述顶升机构上,所述顶升机构和所述衬底均 |
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