Terahertz multimode field effect transistor detector
The invention discloses a terahertz multi-mode field effect transistor detector which comprises a chip, the chip is provided with a substrate, an isolation layer, a channel layer, a barrier layer and an electrode layer from bottom to top in sequence, and antenna probes are arranged on the two sides...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a terahertz multi-mode field effect transistor detector which comprises a chip, the chip is provided with a substrate, an isolation layer, a channel layer, a barrier layer and an electrode layer from bottom to top in sequence, and antenna probes are arranged on the two sides of the chip. The grid electrode is connected with grid electrode voltage input through a power supply lead, the source electrode is grounded, an intermediate frequency signal of the drain electrode is output through an intermediate frequency lead, and the problems that a traditional terahertz detector is small in structural size and high in preparation difficulty are solved by combining a planar transmission line; the planar transmission line is arranged, so that the regulation and control capability of the detector on the two-dimensional electron gas is enhanced; by arranging the antenna probe, the terahertz signal coupling receiving capability of the detector is enhanced, and the performance of the detector is im |
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