Silicon carbide MOSFET structure for optimizing short-circuit current endurance capability

The invention belongs to the technical field of power semiconductors, and relates to a silicon carbide MOSFET structure. Comprising a metallized drain, a highly-doped first conductive type semiconductor substrate, a first conductive type semiconductor epitaxial layer, a second conductive type semiconductor well, a highly-doped second conductive type semiconductor ohmic contact region, a highly-doped first conductive type semiconductor source contact region and a highly-doped first conductive type semiconductor diversion layer, the device comprises a first conductive type semiconductor JFET region, a metalized source electrode, a gate oxide layer, a Schottky metal region, a polysilicon gate electrode, an oxide layer and an N + polysilicon short circuit layer, a separation gate structure is adopted, Schottky contact is integrated in the middle of a gate, and a diversion layer is arranged in a JFET region. And along with the increase of the drain voltage, the Schottky contact enables the JFET region to be quickl