Manufacturing method of dynamic random access memory

The invention provides a method for manufacturing a dynamic random access memory. The method comprises the following steps: forming a hard mask layer on a substrate; forming openings in the hard mask layer and the substrate; forming a dielectric layer on the side wall of the opening; forming a first barrier layer and a first conductor layer in the opening; performing a first dry etching process to partially remove the first barrier layer and the first conductor layer at a first stage; performing a first wet etching process, partially removing the first barrier layer and the first conductor layer in a second stage, and exposing the dielectric layer on the upper side wall of the opening; forming a second barrier layer in the opening; forming a mask layer in the opening to cover the second barrier layer; removing a part of the second barrier layer and a part of the mask layer to expose the dielectric layer on the upper side wall of the opening; and forming a second conductor layer in the opening. 本发明提供一种动态随机存取内存