Preparation method of silicon nanowire gyroscope based on SOI (Silicon On Insulator) silicon wafer

The invention relates to a preparation method of a silicon nanowire gyroscope based on an SOI (Silicon On Insulator) silicon wafer, which comprises the following steps of: selecting the SOI silicon wafer, and preparing a silicon nitride film on the top silicon surface of the SOI silicon wafer to form a dielectric mask layer; forming three triangular patterns on the dielectric mask layer, and etching silicon nitride at the patterns to form three triangular windows; performing dry etching on the silicon at the triangular window to prepare three vertical triangular grooves with the same depth; etching the oxide layer below the vertical triangular groove, and then etching the bottom layer silicon; anisotropic wet etching is carried out on the vertical triangular grooves to form hexagonal etching grooves, a monocrystalline silicon thin-wall structure is formed between every two adjacent hexagonal etching grooves, and two opposite cone structures appear among the three hexagonal etching grooves; a corrosion groove