Probe card manufacturing method for high and low temperature test and probe card

The invention provides a probe card manufacturing method for high and low temperature testing and a probe card, which are applied to the technical field of semiconductor testing, and the probe card manufacturing method comprises the following steps: step 1, determining size change data of a wafer at high temperature, normal temperature and low temperature according to a thermal expansion coefficient of the wafer; 2, according to the test temperature of the wafer, determining the working temperature of a test part of the probe card when the wafer is at the test temperature; and 3, determining the material of the test part according to the working temperature and the size change data to obtain the probe card for the high and low temperature test. Compared with the prior art, the high and low temperature characteristics of the probe card are improved according to the thermal expansion coefficient and the test temperature of the wafer, so that the probe card can be applied to wafer detection in high and low tempe