LED precursor

A method of manufacturing an LED precursor and an LED precursor are provided. An LED precursor is manufactured by forming a monolithic growth stack having a growth surface and forming a monolithic LED stack on the growth surface. The monolithic growth stack includes a first semiconductor layer comprising a group III nitride, a second semiconductor layer, and a third semiconductor layer. The second semiconductor layer includes a first group III nitride containing a donor dopant such that the second semiconductor layer has a donor density of at least 5 * 10 < 18 > cm . The second semiconductor layer has an area porosity of at least 15% and a first in-plane lattice constant. The third semiconductor layer includes a second group III nitride different from the first group III nitride. The monolithic growth stack includes a plateau structure including a third semiconductor layer such that the growth surface includes a plateau surface of the third semiconductor layer and a sidewall surface of the third semicond