MEMORY CELL, SEMICONDUCTOR MODULE, DIMM MODULE, AND METHOD FOR MANUFACTURING SAME

The invention provides a memory cell, a semiconductor module, a DIMM module, and a manufacturing method thereof, wherein an electrode can be formed on a side surface of a laminated body while the cost is reduced. The invention relates to a memory cell (20) having a plurality of memory chips (21), the memory cell (20) having: a memory cell (20) having a plurality of stacked memory chips (21); and a protruding terminal (24) that is disposed so as to protrude from a side surface of the memory cell (20) in the stacking direction (D), and among surfaces of the protruding terminal (24) in a direction intersecting the protruding direction, the surface roughness of the surface facing one side is greater than the surface roughness of the surface facing the other side. 本发明提供一种在抑制成本的同时，能够在层叠体的侧面形成电极的存储器单元、半导体模块、DIMM模块以及它们的制造方法。本发明涉及一种存储器单元(20)，具有多个存储器芯片(21)，存储器单元(20)具有：存储器单元(20)，其具有层叠的多个存储器芯片(21)；以及突出端子(24)，其从存储器单元(20)的沿层叠方向(D)的侧面突出地配置，突出端子(24)的位于与突出方向交叉的方向的表面中的朝向一侧的表面的表面粗糙度大于朝向另一侧的表面的表面粗糙度。