Method of conditioning plasma processing chamber

A method for processing one or more substrates in a plasma processing chamber is provided. A plurality of cycles are provided, where each cycle includes providing a pre-coating process, processing at least one substrate within a plasma processing chamber, and cleaning the plasma processing chamber. Providing a pre-coating process includes one or more cycles of depositing a silicon-containing pre-coating layer and depositing a carbon-containing pre-coating layer. 提供了一种用于在等离子体处理室中处理一个或多个衬底的方法。提供了多个循环，其中每个循环包括提供预涂层工艺、处理在等离子体处理室内的至少一个衬底、以及清洁等离子体处理室。提供预涂层工艺包括沉积含硅预涂层和沉积含碳预涂层的一个或多个循环。