Dislocation distribution for silicon carbide crystalline materials

Silicon carbide (SiC) wafers, SiC ingots, and related methods that provide improved dislocation distribution are disclosed. The SiC ingots provided exhibit reduced dislocation density and improved dislocation uniformity over longer ingot lengths. A corresponding SiC wafer includes a reduced total dislocation density (TDD) value and improved TDD radial uniformity. Growth conditions of the SiC crystalline material include providing a supersaturated amount of source material, wherein the amount of source material present during growth is significantly higher than typically desired amounts. Such SiC crystalline materials and related methods are suitable for providing large diameter SiC ingots and corresponding SiC wafers with improved crystalline quality. 公开了提供改进的位错分布的碳化硅(SiC)晶片、SiC晶锭和相关方法。提供的SiC晶锭在更长的晶锭长度上表现出降低的位错密度和改进的位错均匀性。对应的SiC晶片包括降低的总位错密度(TDD)值和改进的TDD径向均匀性。SiC晶体材料的生长条件包括提供过饱和量的源材料，其中在生长期间存在的源材料的量显著高于通常所需的量。这种SiC晶体材料和相关方法适用于提供具有改进的晶体质量的大直径SiC晶锭和对应的SiC晶片。