Self-driven perovskite transverse single crystal heterojunction photoelectric detector and preparation method thereof
The invention discloses a self-driven perovskite transverse single-crystal heterojunction photoelectric detector and a preparation method thereof, and the method comprises the following steps: 1), obtaining alpha-FAPbI3 single-crystal seeds through employing an inverse temperature crystallization me...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a self-driven perovskite transverse single-crystal heterojunction photoelectric detector and a preparation method thereof, and the method comprises the following steps: 1), obtaining alpha-FAPbI3 single-crystal seeds through employing an inverse temperature crystallization method, and enabling the obtained alpha-FAPbI3 single-crystal seeds to grow into alpha-FAPbI3 single-crystal slices through employing the inverse temperature crystallization method in combination with a seed confinement method; and 2) epitaxially growing an MAPbI3 single crystal slice on the alpha-FAPbI3 single crystal slice through a liquid phase epitaxy process by combining a temperature inversion crystallization method with a seed confinement method to form an annular transverse single crystal heterojunction, and using metal Ag as top electrodes on two sides of the upper surface of the transverse single crystal heterojunction. According to the method, the problems of incident light loss and a large number of defec |
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