Semiconductor device test structure and test method thereof
The invention provides a semiconductor device test structure and a test method thereof.The test structure comprises a dielectric layer and a plurality of metal layers located in the dielectric layer and arranged at intervals, and the metal layers comprise a first metal layer, a second metal layer, a...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention provides a semiconductor device test structure and a test method thereof.The test structure comprises a dielectric layer and a plurality of metal layers located in the dielectric layer and arranged at intervals, and the metal layers comprise a first metal layer, a second metal layer, a third metal layer and a fourth metal layer which are arranged from bottom to top; and wires and switches are arranged among different metal layers, so that the metal layers in different areas are associated. Test voltages are applied to different positions of the same test structure, the electrical properties of dielectric layers between different metal layers are tested, whether electric leakage exists in the dielectric layers between the different metal layers or not is judged, then whether electric leakage exists in the dielectric layers in the semiconductor device structure or not is judged, the flexibility and efficiency of the test structure can be effectively improved, and the test cost is reduced. And mean |
---|