High-speed transmission method and device in monolithic wafer cleaning process

The invention relates to a high-speed transmission method in a monolithic wafer cleaning process. The high-speed transmission method comprises the following steps: maintaining the pressure of a chamber at a preset pressure; a first wafer is transmitted from a transition chamber to a cleaning chamber through a first grabbing structure, a second wafer is transmitted from a previous process to the transition chamber through a second grabbing structure, and a third wafer is transmitted from the cleaning chamber to a drying chamber through a third grabbing structure. And the fourth wafer is conveyed from the drying chamber to the next working procedure through the fourth grabbing structure. According to the high-speed transmission method, nitrogen is injected into the cavity, the pressure in the cavity can be maintained at the preset pressure, particles on the surface of the wafer can be preliminarily separated, and a basic nanoscale gas film is formed on the surface of the wafer; due to the arrangement of the two