Reading method and device of storage chip, electronic equipment and storage medium

The invention relates to the technical field of storage chips, and particularly provides a reading method and device of a storage chip, electronic equipment and a storage medium, a to-be-read storage array comprises at least four continuously arranged word lines, and the method comprises the following steps: S1, taking a middle word line of the to-be-read storage array as a reading word line; s2, carrying out reading operation on data of all storage units on the reading word line; s3, setting a word line which is not read in the to-be-read storage array and has the largest distance from the read word line as a new read word line, and returning to the step S2 until all the storage units in the to-be-read storage array finish reading operation; according to the method, the establishment speed of the word line voltage and the reading speed of the memory chip can be effectively improved. 本申请涉及存储芯片技术领域，具体提供了一种存储芯片的读取方法、装置、电子设备及存储介质，待读取存储阵列包括至少四条连续设置的字线，该方法包括步骤：S1、以所述待读取存储阵列的中间字线为读取字线；S2、对所述读取字线上所有存储单元的数据进行读取操作；S3、