Memory device

A memory device is provided. The memory device includes a cell region including a plurality of word lines, a plurality of bit lines, and a plurality of memory cells connected to the plurality of word lines and the plurality of bit lines disposed therein, each of the plurality of memory cells includes a switching element and a memory element connected in series to each other between a respective word line and a respective bit line; and a peripheral circuit region including control logic configured to, when a read command for a selected memory cell among the plurality of memory cells is received from an external controller, input a pre-voltage to the selected memory cell before reading data of the selected memory cell. The control logic is configured to determine a level of the pre-voltage with reference to a time elapsed after programming the selected memory cell. 提供了存储器装置。所述存储器装置包括：单元区域，包括多条字线、多条位线以及连接到设置在其中的所述多条字线和所述多条位线的多个存储器单元，其中，所述多个存储器单元中的每个包括在相应字线与相应位线之间彼此串联连接的开关元件和存储器元件；以及外围电路区域，包括控制逻辑，控制逻辑被配置为：在针对所述多个