Semiconductor element and forming method thereof

A method of forming a semiconductor element includes forming a first layer over a substrate in a deposition chamber using a first deposition cycle and forming a second layer over the substrate in the deposition chamber using a second deposition cycle. The first deposition cycle includes flowing a first working gas over the substrate and flowing a second working gas over the substrate. The second deposition cycle includes flowing a third working gas over the substrate and flowing a fourth working gas over the substrate. 一种半导体元件及其形成方法，形成半导体元件的方法包括利用第一沉积循环在沉积腔室中的基材上方形成第一层以及利用第二沉积循环在沉积腔室中的基材上方形成第二层。第一沉积循环包括使第一工作气体流过基材上方并且使第二工作气体流过基材上方。第二沉积循环包括使第三工作气体流过基材上方并且使第四工作气体流过基材上方。