Laser radar multi-junction VCSEL array chip based on P substrate growth and preparation method thereof

The invention relates to a preparation method of a laser radar multi-junction VCSEL array chip based on P substrate growth, and the method comprises the following steps: S1, selecting a P-type substrate, and growing a plurality of pairs of P-type Bragg reflectors on the P-type substrate; s2, after growth is completed, multiple groups of quantum wells are grown on the P-type Bragg reflector to serve as a light-emitting region, and the light-emitting region comprises one or more groups of tunnel junctions and oxide layers; s3, growing a plurality of pairs of N-type Bragg reflectors on the light-emitting region; and S4, after the growth is completed, growing a contact layer with a highly doped surface on the N-type Bragg reflector. The invention further discloses a laser radar multi-junction VCSEL array chip based on P substrate growth. According to the invention, the P-type Bragg reflector is grown on the P substrate, so that a heat source is closer to the heat sink substrate with good thermal conductivity, hea