Micro-LED chip structure and manufacturing method thereof
The invention discloses a Micro-LED chip structure which comprises a light-transmitting substrate and an epitaxial layer formed on the light-transmitting substrate, the epitaxial layer comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, the light-emittin...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a Micro-LED chip structure which comprises a light-transmitting substrate and an epitaxial layer formed on the light-transmitting substrate, the epitaxial layer comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, the light-emitting layer is formed between the n-type semiconductor layer and the p-type semiconductor layer, the Micro-LED chip structure further comprises a reflecting layer, and the light reflectivity of the reflecting layer is larger than that of the epitaxial layer; the reflecting layer completely covers the side surface of the epitaxial layer and partially covers the side surface of the light-transmitting substrate. Light emitted from the side face of the chip is reduced, the light extraction rate of the Micro-LED is improved, the energy loss is reduced, and the requirement of a high-brightness display screen is met. And the side surface is coated with the reflecting layer, so that metal in the epitaxial layer can be prevente |
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