Method for reading/writing/recovering data and partition namespace solid state disk

The invention relates to the field of solid state storage devices, in particular to a data reading method, a data writing method, a data recovery method and a partition namespace solid state disk, a flash memory comprises an SLC area and a TLC area, and the total write-in amount of the SLC area is e...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YUAN RONG, ZHANG TAILE, ZHU LEI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to the field of solid state storage devices, in particular to a data reading method, a data writing method, a data recovery method and a partition namespace solid state disk, a flash memory comprises an SLC area and a TLC area, and the total write-in amount of the SLC area is equal to the total write-in amount of the TLC area; wherein the SLC flash memory block of the SLC area is used for storing data in pages which are fully written in the memory block and storing data in pages which are not fully written in the memory block after abnormal power failure; and the TLC flash memory block in the TLC region is used for storing data which is stored in the SLC flash memory block and can be fully written into the page of the TLC flash memory block. According to the method and the device, the data in the ZNSSSD can be subjected to power-down storage within the effective use time of the power-down capacitor. 本申请涉及固态存储设备领域,尤其涉及一种读数据的方法、写数据的方法、恢复数据的方法及分区命名空间固态硬盘,其闪存包括:SLC区域和TLC区域,SLC区域的总写入量等于TLC区域总