Capacitive sensor and manufacturing method thereof

The invention relates to the field of sensors, in particular to a capacitive sensor and a manufacturing method thereof. The capacitive sensor is characterized in that the capacitive sensor comprises a plurality of pixel units arranged side by side, and each pixel unit comprises a silicon substrate, a structural layer and a passivation layer; the structural layer is arranged on the upper surface of the silicon substrate and comprises a top metal layer and a dielectric layer; the dielectric layer is arranged below the top metal layer, and the passivation layer is arranged on the upper surface of the structural layer; the top metal layer is provided with one or more through holes, and the through holes are circular; the passivation layer is provided with one or more grooves, and the symmetry axis of the grooves coincides with the symmetry axis of the through holes. By forming the circular through hole in the top metal layer of the pixel unit, the problem of chip failure caused by a humid and hot environment is i