Method for growing large-size monocrystal diamond based on side bonding splicing

The invention discloses a method for growing large-size monocrystal diamond based on side bonding splicing, and belongs to the field of diamond semiconductor growth. A mosaic spliced substrate is formed by splicing single crystal diamond seed crystals through side surface bonding, CVD diamond is epi...

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Bibliographische Detailangaben
Hauptverfasser:	LIU JINLONG, ZHAO SHANGMAN, WEI JUNJUN, LI SHUTONG, LI CHENGMING, ZHENG YUTING, ZHU ZILING, WANG PENG, QIAO GUANZHONG, ZHANG JIANJUN, CHEN LIANGXIAN, OUYANG XIAOPING
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention discloses a method for growing large-size monocrystal diamond based on side bonding splicing, and belongs to the field of diamond semiconductor growth. A mosaic spliced substrate is formed by splicing single crystal diamond seed crystals through side surface bonding, CVD diamond is epitaxially grown on the substrate, and the process comprises the following steps of: a, polishing the side surface of the single crystal diamond to obtain a smooth vertical side surface; b, performing Ar < + > ion beam bombardment on the side surface of the diamond seed crystal to remove gas and natural oxide adsorbed on the side surface; c, plating a bonding metal film on the side surface of the seed crystal; d, quickly bonding the coated seed crystal or the uncoated seed crystal subjected to Ar < + > treatment, and tightly pressing the coated seed crystal or the uncoated seed crystal subjected to Ar < + > treatment; e, carrying out polishing treatment on the spliced substrate on the same polishing workpiece; and f,