Semiconductor device and manufacturing method thereof

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate, wherein an active structure and a gate structure are formed above the substrate; the etching barrier layer is formed between the two gate structures; the etching barrier layer is separated from the active structure to form an expansion space, and the expansion space is filled with a contact structure. According to the preparation method, the pseudo dielectric layer is formed between the etching barrier layer and the active structure, and then the pseudo dielectric layer is removed through etching, so that the expansion space for the contact structure to extend and enter can be formed between the etching barrier layer and the active structure, and therefore, the abutting area of the active structure and the contact structure can be expanded, and the contact resistance can be reduced. 一种半导体器件及其制造方法。所述半导体器件包括：衬底，所述衬底上方形成有源结构和栅极结构；蚀刻阻挡层，形成于两个所述栅极结构之间；所述蚀刻阻挡层与所述有源结构间隔开以形成扩充空间，所述扩充空间内填充有