Manufacturing method of semiconductor device and semiconductor device

The invention discloses a manufacturing method of a semiconductor device and the semiconductor device, and the manufacturing method comprises the steps: providing a substrate, the substrate is provided with an active structure and a gate structure, and the gate structure comprises a sacrificial gate structure used for being removed and a reserved gate structure remaining after the sacrificial gate structure is removed; removing the sacrificial gate structure in a predetermined region to form a corresponding gate opening; after the gate opening is formed, a barrier layer and/or an interlayer dielectric layer abutting against the side wall of the reserved gate structure are/is deposited above the substrate and in the gate opening; and forming a gate spacer in the gate opening in which the barrier layer and/or the interlayer dielectric layer are/is formed. 本申请公开一种半导体器件的制作方法和半导体器件，所述制作方法包括：提供一衬底，所述衬底上设置有源结构和栅极结构，所述栅极结构包括用于被移除的牺牲栅极结构和移除后剩余的预留栅极结构；在预定区域处，移除所述牺牲栅极结构以形成对应的栅极开口；在形成所述栅极开口之后，在所述衬底上方以及所述栅极开口内沉积抵接所述预留栅极结构