Vertical gallium nitride-based fin-type radio frequency transistor and preparation method thereof

The invention relates to a vertical gallium nitride-based fin-type radio frequency transistor and a preparation method thereof. The radio frequency transistor comprises a substrate layer; the drain electrode contact layer is arranged on the substrate layer; the channel layer is arranged on a part of the drain electrode contact layer; the source electrode contact layer is arranged on the second channel sub layer; the two drain electrodes are arranged at the two ends of the drain electrode contact layer, and the channel layer is located between the two drain electrodes; the two gate electrodes are arranged on the first channel sub-layer, the second channel sub-layer is located between the two gate electrodes, and the side edges of the gate electrodes are connected with the side edge of the second channel sub-layer; and the source electrode is arranged on the source electrode contact layer. The invention provides a radio frequency transistor adopting a vertical fin structure, the gate length is determined by the