High-voltage diode and high-voltage diode manufacturing method

The embodiment of the invention provides a high-voltage diode and a high-voltage diode manufacturing method, and relates to the field of semiconductor power devices and manufacturing. In the embodiment of the invention, the diffusion regions penetrating through the first semiconductor layer and the second semiconductor layer are formed at the two opposite ends of the first semiconductor layer and the second semiconductor layer of the high-voltage diode, so that the high-voltage diode can bear relatively large high voltage (such as voltage above 1800V), meanwhile, the terminal of the high-voltage diode is reduced, the product size is reduced, and the production cost is reduced. The manufacturing cost can be saved, the power consumption can be reduced, and packaging is facilitated. 本申请实施例提供的高压二极管及高压二极管制作方法，涉及半导体功率器件及制造领域。本申请实施例中，在高压二极管的第一半导体层和第二半导体层相对两端形成将第一半导体层及第二半导体层贯穿的扩散区，可以使得高压二极管能承受较大的高压(比如，1800V以上的电压)，同时高压二极管的终端变小，产品尺寸变小，可以节省制作成本，同时还可以降低功耗，便于封装。