C/Sb2Te3 type superlattice thin film material and preparation and application thereof

The invention discloses a C/Sb2Te3 type superlattice thin film material, which is formed by alternately depositing and compounding C layers and Sb2Te3 layers on a base material, the structural expression general formula of the material is [C (xnm)/Sb2Te3 (ynm)] a, xnm is the thickness of a single C layer and 0 nmlt, ynm is the thickness of a single Sb2Te3 layer and 0 mlt is the thickness of a single Sb2Te3 layer, y is the thickness of a single Sb2Te3 layer and 0 mlt is the thickness of a single Sb2Te3 layer. X nmlt; 10 nm; ynm is the thickness of the single Sb2Te3 layer and is 0 nmlt; y nmlt; 10 nm; and a is the number of alternating cycles of the C layer and the Sb2Te3 layer and is greater than or equal to 2 and less than or equal to 10. Compared with a traditional thin film material, the C/Sb2Te3 type superlattice thin film material has three different phases of an amorphous state, an intermediate state and a crystalline state in the crystallization process and shows three different resistance values, and c