Method for manufacturing semiconductor substrate

The invention provides a method for manufacturing a semiconductor substrate. The method comprises the following steps: performing a chemical mechanical polishing process on a silicon carbide wafer; a heating process is performed on the silicon carbide wafer to remove a naturally formed oxide layer and remove impurities to obtain a scratch-free surface and planarization, and the heating process comprises the following steps: heating the cavity of the furnace and the silicon carbide wafer to T DEG C, maintaining the temperature for t, and introducing hydrogen, argon, nitrogen and/or hydrogen chloride into the cavity; and then the furnace is cooled. 本发明提供一种半导体衬底的制造方法，包括：对碳化硅晶片执行化学机械研磨工艺；对碳化硅晶片执行加热工艺以移除自然形成氧化层、去杂质、获得无刮痕表面及平坦化，其中加热工艺包括：将炉子的腔体以及碳化硅晶片升温至摄氏T度并维持时间t，并于腔体中通入氢气、氩气、氮气和/或氯化氢；然后降温炉子。