Worm structure oriented growth barium ferrite film with low modulation electric field and high dielectric adjustability and preparation method thereof

The invention discloses a worm structure oriented growth barium ferrite film with a low modulation electric field and high dielectric adjustability, the film is a barium ferrite film with excessive barium, relative to stoichiometric barium ferrite BaFe12O19, the molar ratio of barium to iron in the film is Ba: Fe = x: 12, and x = 2-3; the film has a wormlike microstructure form and is a (00l) oriented polycrystalline material. The obtained worm structure barium ferrite film has a low modulation electric field and high dielectric adjustability, and the dielectric tuning rate is the highest gt; the optimal value is the highest gt; and 16, modulating the bias electric field to be 150-400V/cm. The sol-gel and spin-coating combined preparation method is adopted, the process is simple, the controllability is high, the preparation period is short, the cost is low, and the single-phase barium ferrite film material which shows high dielectric tuning rate under a very low modulation electric field can be obtained. The