Resistive random access memory containing nanocrystalline clusters and preparation method thereof

The invention provides a resistive random access memory containing nanocrystalline clusters and a preparation method of the resistive random access memory. A resistive random layer comprises a first oxide layer and a second oxide layer, the second oxide layer contains a nanocrystalline cluster, the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	REN SHENGGUANG, MIAO XIANGSHUI, ZUO WENBIN, LI YI, XUE YIBAI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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