Resistive random access memory containing nanocrystalline clusters and preparation method thereof

The invention provides a resistive random access memory containing nanocrystalline clusters and a preparation method of the resistive random access memory. A resistive random layer comprises a first oxide layer and a second oxide layer, the second oxide layer contains a nanocrystalline cluster, the nanocrystalline cluster is made of a partial metallization metal oxide, and after forward bias voltage is applied to the resistance change layer, voltage drop is distributed on the first oxide layer; oxygen vacancies of the second oxide layer orderly enter the first oxide layer according to the concentration gradient in the vertical direction and form a first conductive filament on the first oxide layer, and the second oxide layer is induced to form a second conductive filament, so that the resistive random access memory is converted from a high resistance state to a low resistance state; afterwards, after negative bias voltage is applied to the resistive random access layer, the voltage drop firstly falls on the f