Electronic device and manufacturing method thereof

An electronic device including a semiconductor memory and a method for manufacturing the electronic device are provided. An electronic device includes a semiconductor memory including: a first line; a second line disposed over the first line to be spaced apart from the first line; a variable resistance layer disposed between the first line and the second line; a first electrode layer disposed between the first line and the variable resistance layer; and a first oxide layer disposed between the variable resistance layer and the first electrode layer, in which the first electrode layer includes a first carbon material doped with a first element, and in which the first oxide layer includes a first oxide of the first element. 本发明提供了一种包括半导体存储器的电子设备以及用于制造该电子设备的方法。一种电子设备包括半导体存储器，该半导体存储器包括：第一线；第二线，该第二线被设置在第一线之上以与第一线间隔开；可变电阻层，该可变电阻层被设置在第一线与第二线之间；第一电极层，该第一电极层被设置在第一线与可变电阻层之间；以及第一氧化物层，该第一氧化物层被设置在可变电阻层与第一电极层之间，其中，第一电极层包括掺杂有第一元素的第一碳材料，以及其中，第一氧化物层包括第一元素的第一氧化物。