Electrical detection device formed on wafer substrate by using semiconductor process

The invention provides an electrical property detection device formed on a wafer substrate by using a semiconductor process. The electrical property detection device comprises a first crystalline silicon wafer carrier and a second crystalline silicon wafer carrier, a plurality of machine electric connection pads are formed on the upper surface of the first crystalline silicon wafer carrier and are used for directly or indirectly forming electric conduction with a test machine; a plurality of probes or light detection pieces perpendicular to the lower surface are formed on the lower surface of the first crystalline silicon wafer carrier, and the machine electric connection pads are electrically connected with the probes or the light detection pieces. The second crystal silicon wafer carrier is arranged on the lower surface, and is provided with a plurality of counterpoint through holes corresponding to the probes, so that the probes can pass through the counterpoint through holes in a one-to-one manner, and th