Method for preparing silicon carbide and silicon carbide

The invention relates to a method for preparing silicon carbide, which comprises the following steps of: mixing a powdery organic polymer material with CxHyOz and monatomic silicon powder, pressing into blocks, and heating by a microwave method to obtain the silicon carbide. According to the method...

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Hauptverfasser: MA AIZHEN, ZHAO HAIFENG, LIU JUN, HAN LINING, FANG ZHAOQING, XIE DANDAN, SONG ANKANG, SONG WENWEN, ZHU GUOBEN, ZHANG BAORONG
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention relates to a method for preparing silicon carbide, which comprises the following steps of: mixing a powdery organic polymer material with CxHyOz and monatomic silicon powder, pressing into blocks, and heating by a microwave method to obtain the silicon carbide. According to the method for preparing the silicon carbide, the cured phenolic resin powder and the monatomic silicon powder are mixed and then are heated by microwaves, so that more silicon carbide can be generated under the condition of lower temperature, and a large amount of energy can be saved. 本发明涉及一种制备碳化硅的方法包括下列步骤,包括下列步骤,将粉状的具有CxHyOz组成的有机高分子材料,与单质硅粉料混合,压制成块,用微波加热方法得到碳化硅。本发明制备碳化硅的方法将固化的酚醛树脂粉料与单质硅粉料混合后用微波加热,在温度比较低的情况下即可生成较多的碳化硅,可以节省大量能源。