Semiconductor structure and manufacturing method thereof
The embodiment of the invention relates to a semiconductor structure and a manufacturing method thereof. The embodiment of the invention provides a semiconductor structure. The semiconductor structure includes a first substrate, a semiconductor layer, a second substrate, and a eutectic sealing struc...
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| creator | SHEN JINGKAI DENG YIQUAN DU RONGGUO |
| description | The embodiment of the invention relates to a semiconductor structure and a manufacturing method thereof. The embodiment of the invention provides a semiconductor structure. The semiconductor structure includes a first substrate, a semiconductor layer, a second substrate, and a eutectic sealing structure. The semiconductor layer is over the first substrate. The semiconductor layer has a cavity at least partially through the semiconductor layer. The second substrate is over the semiconductor layer. The second substrate has a through hole. The eutectic sealing structure is on the second substrate and covers the through hole. The eutectic sealing structure includes a first metal layer and a second metal layer eutectic bonded on the first metal layer. The embodiment of the invention also provides a method for manufacturing the semiconductor structure.
本发明实施例涉及半导体结构及其制作方法。本发明实施例提供一种半导体结构。所述半导体结构包含第一衬底、半导体层、第二衬底及共晶密封结构。所述半导体层在所述第一衬底上方。所述半导体层具有至少部分穿过所述半导体层的腔。所述第二衬底在所述半导体层上方。所述第二衬底具有贯穿孔。所述共晶密封结构在所述第二衬底上且覆盖所述贯穿孔。所述共晶密封 |
| format | Patent |
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本发明实施例涉及半导体结构及其制作方法。本发明实施例提供一种半导体结构。所述半导体结构包含第一衬底、半导体层、第二衬底及共晶密封结构。所述半导体层在所述第一衬底上方。所述半导体层具有至少部分穿过所述半导体层的腔。所述第二衬底在所述半导体层上方。所述第二衬底具有贯穿孔。所述共晶密封结构在所述第二衬底上且覆盖所述贯穿孔。所述共晶密封</description><language>chi ; eng</language><subject>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; TRANSPORTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221018&DB=EPODOC&CC=CN&NR=115196584A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221018&DB=EPODOC&CC=CN&NR=115196584A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHEN JINGKAI</creatorcontrib><creatorcontrib>DENG YIQUAN</creatorcontrib><creatorcontrib>DU RONGGUO</creatorcontrib><title>Semiconductor structure and manufacturing method thereof</title><description>The embodiment of the invention relates to a semiconductor structure and a manufacturing method thereof. The embodiment of the invention provides a semiconductor structure. The semiconductor structure includes a first substrate, a semiconductor layer, a second substrate, and a eutectic sealing structure. The semiconductor layer is over the first substrate. The semiconductor layer has a cavity at least partially through the semiconductor layer. The second substrate is over the semiconductor layer. The second substrate has a through hole. The eutectic sealing structure is on the second substrate and covers the through hole. The eutectic sealing structure includes a first metal layer and a second metal layer eutectic bonded on the first metal layer. The embodiment of the invention also provides a method for manufacturing the semiconductor structure.
本发明实施例涉及半导体结构及其制作方法。本发明实施例提供一种半导体结构。所述半导体结构包含第一衬底、半导体层、第二衬底及共晶密封结构。所述半导体层在所述第一衬底上方。所述半导体层具有至少部分穿过所述半导体层的腔。所述第二衬底在所述半导体层上方。所述第二衬底具有贯穿孔。所述共晶密封结构在所述第二衬底上且覆盖所述贯穿孔。所述共晶密封</description><subject>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAITs3NTM7PSylNLskvUiguKQIySotSFRLzUhRyE_NK0xJB_My8dIXc1JKM_BSFkozUotT8NB4G1rTEnOJUXijNzaDo5hri7KGbWpAfn1pckJicmpdaEu_sZ2hoamhpZmph4mhMjBoAc1IvNA</recordid><startdate>20221018</startdate><enddate>20221018</enddate><creator>SHEN JINGKAI</creator><creator>DENG YIQUAN</creator><creator>DU RONGGUO</creator><scope>EVB</scope></search><sort><creationdate>20221018</creationdate><title>Semiconductor structure and manufacturing method thereof</title><author>SHEN JINGKAI ; DENG YIQUAN ; DU RONGGUO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115196584A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>SHEN JINGKAI</creatorcontrib><creatorcontrib>DENG YIQUAN</creatorcontrib><creatorcontrib>DU RONGGUO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHEN JINGKAI</au><au>DENG YIQUAN</au><au>DU RONGGUO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor structure and manufacturing method thereof</title><date>2022-10-18</date><risdate>2022</risdate><abstract>The embodiment of the invention relates to a semiconductor structure and a manufacturing method thereof. The embodiment of the invention provides a semiconductor structure. The semiconductor structure includes a first substrate, a semiconductor layer, a second substrate, and a eutectic sealing structure. The semiconductor layer is over the first substrate. The semiconductor layer has a cavity at least partially through the semiconductor layer. The second substrate is over the semiconductor layer. The second substrate has a through hole. The eutectic sealing structure is on the second substrate and covers the through hole. The eutectic sealing structure includes a first metal layer and a second metal layer eutectic bonded on the first metal layer. The embodiment of the invention also provides a method for manufacturing the semiconductor structure.
本发明实施例涉及半导体结构及其制作方法。本发明实施例提供一种半导体结构。所述半导体结构包含第一衬底、半导体层、第二衬底及共晶密封结构。所述半导体层在所述第一衬底上方。所述半导体层具有至少部分穿过所述半导体层的腔。所述第二衬底在所述半导体层上方。所述第二衬底具有贯穿孔。所述共晶密封结构在所述第二衬底上且覆盖所述贯穿孔。所述共晶密封</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS TRANSPORTING |
| title | Semiconductor structure and manufacturing method thereof |
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