Semiconductor structure and manufacturing method thereof

The embodiment of the invention relates to a semiconductor structure and a manufacturing method thereof. The embodiment of the invention provides a semiconductor structure. The semiconductor structure includes a first substrate, a semiconductor layer, a second substrate, and a eutectic sealing structure. The semiconductor layer is over the first substrate. The semiconductor layer has a cavity at least partially through the semiconductor layer. The second substrate is over the semiconductor layer. The second substrate has a through hole. The eutectic sealing structure is on the second substrate and covers the through hole. The eutectic sealing structure includes a first metal layer and a second metal layer eutectic bonded on the first metal layer. The embodiment of the invention also provides a method for manufacturing the semiconductor structure. 本发明实施例涉及半导体结构及其制作方法。本发明实施例提供一种半导体结构。所述半导体结构包含第一衬底、半导体层、第二衬底及共晶密封结构。所述半导体层在所述第一衬底上方。所述半导体层具有至少部分穿过所述半导体层的腔。所述第二衬底在所述半导体层上方。所述第二衬底具有贯穿孔。所述共晶密封结构在所述第二衬底上且覆盖所述贯穿孔。所述共晶密封