5G broadband radio frequency driving amplification module circuit

The invention discloses a 5G broadband radio frequency driving amplification module circuit which comprises a GaAs HBT broadband high-gain driving amplifier and a Si control circuit. The beneficial effects of the invention are that the Si control circuit is composed of a band-gap reference circuit and a linear voltage stabilizing circuit, the band-gap reference circuit provides a high-precision low-temperature-drift reference voltage for the linear voltage stabilizing circuit, and the linear voltage stabilizing circuit ensures the driving capability of the output control voltage and enables the control voltage to be stable in a power supply voltage change range. According to the GaAs HBT broadband high-gain driving amplifier circuit, the high-gain characteristic of a GaAs HBT device and the method that an LGA integrated discrete component replaces an on-chip matched inductor are utilized, so that the device obtains high output power (the output saturation power is 27 dBm when the frequency is 3.6 GHz); the hi