Semiconductor device process method

The invention discloses a process method of a semiconductor device, which is based on the etching of polycrystalline silicon with steps, and comprises the following steps of: depositing a dielectric layer on the surface of a thin film with the steps before depositing the polycrystalline silicon, and then depositing a polycrystalline silicon layer after the etching of the dielectric layer. According to the process method of the semiconductor device, aiming at the problem that etching residues exist at step corners during a step-shaped surface etching process, slopes of other dielectric layers are formed once to fill the step corners, and then corresponding films are deposited, so that when the films are etched, because the steps are filled by the slopes, the etching of the films is more thorough, and the yield of the films is improved. The problem of etching residues is solved. 本发明公开了一种半导体器件的工艺方法，基于存在台阶的多晶硅刻蚀，在沉积多晶硅之前，先在具有台阶的薄膜表面沉积一层介质层，然后在介质层刻蚀之后再沉积多晶硅层。本发明所述的半导体器件的工艺方法，针对台阶状表面刻蚀工艺时在台阶角落存在刻蚀残留的问题，先形成一次其他介质层的斜